Dilute nitride semiconductors
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of...
| Κύριος συγγραφέας: | Henini, Mohamed. |
|---|---|
| Μορφή: | Ηλεκτρονική πηγή |
| Γλώσσα: | English |
| Στοιχεία έκδοσης: |
Amsterdam ; London :
Elsevier,
2005.
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| Θέματα: | |
| Διαθέσιμο Online: |
http://www.sciencedirect.com/science/book/9780080445021 |
| Ετικέτες: |
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Πίνακας περιεχομένων:
- MBE growth and characterization of long wavelength dilute nitride III-V alloys
- Epitaxial growth of dilute nitrides by metal-organic vapour phase epitaxy
- The chemical beam epitaxy of dilute nitride alloy semiconductors
- MOMBE growth and characterization of III-V-N compounds and application to InAs quantum dots
- Recent progress in dilute nitride quantum dots
- Physics of isoelectronic dopants in GaAs
- Measurement of carrier localization degree, electron effective mass, and excition size in InxGa1-xAs1-yNy alloys
- Probing the "unusual" band structure of dilute Ga(AsN) quantum wells by magneto-tunnelling spectroscopy and other techniques
- Photo- and electro-reflectance of III-V-N compounds and low dimensional structures
- Band anticrossing and related electronic structure in III-N-V alloys
- A tight-binding based analysis of the band anti-crossing model and its application in Ga(In)NAs alloys
- electronic structure evolution of dilute III-V nitride alloys
- Theory of nitrogen-hydrogen complexes in N-containing III-V alloys
- Dislocation-free III-V-N alloy layers on Si substrates and their device applications
- GaNAsSb alloy and its potential for device applications
- A comparative look at 1.3 [micro]m InGaAsN-based VCSELs for fiber-optical communication systems
- Long-wavelength dilute nitride-antimonide lasers
- Application of dilute nitride materials to heterojunction bipolar transistors.